Infineon IRF7807ZTRPBF
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7807ZTRPBF | 0 | 4K | Bulk | 13h | |||||||
| Farnell | IRF7807ZTRPBF | 0 | 1 | Cut Tape | 21h | |||||||
| Microchip USA | IRF7807ZTRPBF | 2736 | 3K | Tray | 13h | |||||||
| Win Source | WS-160054 | 6000 | 120 | 21h | ||||||||
| Worldway Electronics | IRF7807ZTRPBF | 9493 | 7 | Tape & Reel | 21h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7807ZTRPBF.
Modelli CAD
Scarica il simbolo Infineon IRF7807ZTRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | 3D | Scarica |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
Parti correlate
InfineonSI4410DYPBF
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
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Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
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N-Channel 30 V 11.9 mOhm Surface Mount Schottky Diode Mosfet - SOIC-8
Diodes Inc.DMG4407SSS-13
1.45W(Ta) 25V 3V@ 250¦ÌA 20.5nC@ 10 V 1P 30V 11m¦¸@ 12A,20V 9.9A 2.246nF@15V SOIC-8 1.75mm
Descrizioni
Descrizioni di Infineon IRF7807ZTRPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 11A;SO-8;PD 2.5W;VGS +/-20V
Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):18.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.8 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time3.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance770 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance13.8 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max13.8 mΩ
Resistance13.8 MΩ
Rise Time6.2 ns
Schedule B8541290080
Turn-Off Delay Time10 ns
Turn-On Delay Time6.9 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7807ZTRPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità