Infineon IRS2101SPBF
$ 0.986
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -17.75%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRS2101SPBF.
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.986
$ 0.547
Stock
348,241
709,603
Authorized Distributors
6
6
Case/Package
SOP
SOP
Number of Pins
8
8
Channel Type
Independent
Independent
Number of Drivers
2
2
Max Output Current
600 mA
600 mA
Rise Time
70 ns
70 ns
Fall Time
35 ns
35 ns
Min Supply Voltage
10 V
10 V
Max Supply Voltage
20 V
20 V
Max Power Dissipation
625 mW
625 mW
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.31.00.01
Introduction Date2006-02-15
Lifecycle StatusObsolete (Last Updated: 2 months ago)
Parti correlate
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InfineonAUIRS2181STR
Tape & Reel (TR) AU842992 Half-Bridge 2000 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW
onsemiNCP5109ADR2G
85ns 2 10V 170ns 20V 800mV,2.3V Non-Inverting IGBT,MOSFET,N 35ns 250mA,500mA SOIC-8 , 1.5mm
onsemiNCP5109BDR2G
IC GATE DRVR HALF-BRIDGE 8SOIC / Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
onsemiNCP81071ADR2G
NCP81071ADR2G, DUAL MOSFET POWER DRIVER 5A, 4.5 TO 20 V, INVERTING, 8-PIN SOIC
Descrizioni
Descrizioni di Infineon IRS2101SPBF fornite dai suoi distributori.
Tube IRS2101SPBF High-Side or Low-Side 1996 gate driver 170ns -40C~150C TJ 290mA 600mA 625mW
Power MOSFET and IGBT Driver, High Voltage, High Speed, 600V, 8-pin SOIC, Tube
600 V high-side and low-side gate driver IC, SOIC 8N, RoHS
Infineon SCT
IRS2101 Series 600 V 290 mA 20 V Supply Dual High And Low Side Driver - SOIC-8
70ns 2 10V 220ns 20V 800mV,2.5V Non-Inverting IGBT,MOSFET,N 35ns , 290mA,600mA SOIC-8 1.5mm
MOSFET Driver IC; Device Type:High and Low Side; Supply Voltage Max:20V; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Fall Time, tf:35ns; High Side MOSFET Drive Type:Bootstrapped ;RoHS Compliant: Yes
600 V High and Low Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Outputs in phase with inputs
IC, DRIVER, HIGH/LOW SIDE, SOIC8; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:600mA; Input Delay:160ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2101; No. of Outputs:2; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:290mA; Output Current + Max:270mA; Output Sink Current Min:270mA; Output Source Current Min:130mA; Output Voltage:620V; Output Voltage Max:20V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -17.75%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Ambient Temperature Range High125 °C
Channel TypeIndependent
Fall Time35 ns
Max Junction Temperature (Tj)150 °C
Max Operating Temperature125 °C
Max Output Current600 mA
Max Power Dissipation625 mW
Max Supply Current270 µA
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage10 V
Nominal Supply Current150 µA
Number of Channels2
Number of Circuits1
Number of Drivers2
Number of Outputs2
Operating Supply Voltage15 V
Output Current290 mA
Output Voltage620 V
Package Quantity3800
Power Dissipation625 mW
Propagation Delay220 ns
Release Time150 ns
Rise Time70 ns
Schedule B8542390000
Temperature GradeAutomotive
Turn-Off Delay Time150 ns
Turn-On Delay Time160 ns
Dimensions
Height1.72 mm
Height - Seated (Max)1.75 mm
Length4.9 mm
Terminal Pitch1.27 mm
Width3.9 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRS2101SPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità