Infineon IRLS4030-7PPBF
$ 9.05
Obsolete
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Questo componente
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Price @ 1000
$ 9.05
$ 3.385
Stock
52,002
140,890
Authorized Distributors
2
3
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
190 A
190 A
Threshold Voltage
2.5 V
2.5 V
Rds On Max
3.9 mΩ
3.9 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
370 W
370 W
Input Capacitance
11.49 nF
11.49 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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Descrizioni
Descrizioni di Infineon IRLS4030-7PPBF fornite dai suoi distributori.
Single N-Channel 100 V 3.9 mOhm 93 nC HEXFET® Power Mosfet - D2PAK-7
100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
Trans Mosfet N-Ch 100V 190A 7-Pin(6+Tab) D2Pak Tube Rohs Compliant: Yes
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Superior R*Q at 4.5V VGS; Logic Level; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
MOSFET, N-CH 100V 190A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:370W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:190A; Package / Case:D2-PAK-7; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)190 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time87 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance11.49 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
On-State Resistance3.9 mΩ
Package Quantity3000
Power Dissipation370 W
Rds On Max3.9 mΩ
Resistance3.9 MΩ
Rise Time160 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.5 V
Turn-Off Delay Time110 ns
Turn-On Delay Time53 ns
Dimensions
Height5.084 mm
Length10.3378 mm
Width6.85 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità