Infineon IRLR9343TRPBF
$ 0.588
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Cronologia dell'inventario
Tendenza a 3 mesi: +8.29%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-25
Lifecycle StatusProduction (Last Updated: 5 months ago)
Parti correlate
InfineonIRFR5505PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
InfineonIRFR5505TRLPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
InfineonIRFR5505GTRPBF
MOSFET, P-CHANNEL, -55V, -18A, 110 MOHM, 21.3 NC QG, D-PAK, HALOGEN-FREE
Descrizioni
Descrizioni di Infineon IRLR9343TRPBF fornite dai suoi distributori.
MOSFET, P-CHANNEL, -55V, -20A, 105 MOHM, 31 NC QG, LOGIC LEVEL, D-PAK
Trans MOSFET P-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 55V 20A DPAK
Single P-Channel 55 V 93 mOhm 31 nC HEXFET® Power Mosfet - TO-252-3
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 55 V, 20 A, 0.093 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-20A; On Resistance, Rds(on):105mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:DPAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +8.29%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time9.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage55 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance105 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation79 W
Rds On Max105 mΩ
Resistance93 MΩ
Rise Time24 ns
Schedule B8541290080
Turn-Off Delay Time21 ns
Turn-On Delay Time9.5 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità