Infineon IRFR5505TRLPBF

Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.11 Ohm; Id -18A; D-pak (TO-252AA); Pd 57W
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRFR5505TRLPBF03KBulk
6h
Win SourceWS-IRFR5505TRLPBF69.430200
15h
Worldway ElectronicsIRFR5505TRLPBF13.2377Tape & Reel
14h
Classic ComponentsIRFR5505TRLPBF8160
5h
Fmall Co., LimitedIRFR5505TRLPBF47.240
>1wk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR5505TRLPBF.

IHS

Datasheet11 pagine13 anni fa
Datasheet10 pagine13 anni fa

Newark

DigiKey

RS (Formerly Allied Electronics)

Cronologia dell'inventario

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-06-30

Parti correlate

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MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
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Descrizioni

Descrizioni di Infineon IRFR5505TRLPBF fornite dai suoi distributori.

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
RS (Formerly Allied Electronics)
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-18A; On Resistance, Rds(on):110mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:DPAK ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 110 / Gate-Source Voltage V = 20 / Fall Time ns = 16 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 57
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Immagini

Infineon
Newark
Distrelec
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  • SP001552238