Infineon IRLR8256PBF
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Parti correlate
InfineonIRFR3709ZPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5.2Milliohms;ID 86A;D-Pak (TO-252AA);PD 79W
onsemiNTD4858NAT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.2A Ta 73A Tc 13.6A 2W 25V
Descrizioni
Descrizioni di Infineon IRLR8256PBF fornite dai suoi distributori.
MOSFET, 25V, 81A, 5.7MOHM, 10 NC QG, LOGIC LEVEL, D-PAK
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH 25V 81A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Package / Case:D-PAK; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)81 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.7 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationSingle
Fall Time8.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.47 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation63 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance5.7 mΩ
Package Quantity3000
Power Dissipation63 W
Rds On Max5.7 mΩ
Recovery Time29 ns
Resistance5.7 MΩ
Rise Time46 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time12 ns
Turn-On Delay Time9.7 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità