Infineon IRLR3410TRPBF

Power MOSFET, N Channel, 100 V, 17 A, 105 Milliohms, TO-252AA (DPAK), 3 Pins, Surface Mount
$ 0.443
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
AvnetIRLR3410TRPBF80002K
1d
NewarkIRLR3410TRPBF12.0061Cut Tape
Future Electronics
2
IRLR3410TRPBF120.0002KTape & Reel
Arrow Electronics
3
IRLR3410TRPBF11.2831
RutronikTMOSP1263920002K
5h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRLR3410TRPBF.

Newark

Datasheet11 pagine21 anni fa
Datasheet12 pagine21 anni fa
Datasheet10 pagine21 anni fa

iiiC

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Parti alternative

Questo componente
Parti alternative
InfineonIRLR3410TRPBF
InfineonAUIRLR3410TRL
InfineonAUIRLR3410TRL
Price @ 1000
$ 0.443
$ 1.17
$ 1.17
Stock
2,192,342
632,354
632,354
Authorized Distributors
6
5
5
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
17 A
17 A
17 A
Threshold Voltage
2 V
-
-
Rds On Max
105 mΩ
105 mΩ
105 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
52 W
79 W
79 W
Input Capacitance
800 pF
800 pF
800 pF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-30
Lifecycle StatusProduction (Last Updated: 1 month ago)

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InfineonIRLR3410PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.105Ohm;ID 17A;D-Pak (TO-252AA);PD 79W
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18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 18A DPAK
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Descrizioni

Descrizioni di Infineon IRLR3410TRPBF fornite dai suoi distributori.

Power MOSFET, N Channel, 100 V, 17 A, 105 Milliohms, TO-252AA (DPAK), 3 Pins, Surface Mount
EBV Elektronik
Single N-Channel 100V 155 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ComSIT Distribution GmbH
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 105 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79
Distrelec

Immagini

Infineon
Farnell
RS (Formerly Allied Electronics)
Augswan
element14
element14 APAC
TME
Conrad
iiiC
Micros
Future Electronics
Component Sense
LZChips
LCSC
South Microelectronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLR3410TRPBF
  • IRLR3410TRPBF.
  • SP001567392