Infineon IRLR3114ZPBF

Single N-Channel 40 V 4.9 mOhm 40 nC HEXFET® Power Mosfet - TO-252AA
$ 2.07
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRLR3114ZPBF05Bulk
2d
FarnellIRLR3114ZPBF01
2h
Win SourceWS-IRLR3114ZPBF80.92090
8h
Worldway ElectronicsIRLR3114ZPBF12.7567Tube
7h
Fly-Wing TechnologyIRLR3114ZPBF70.368
6h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRLR3114ZPBF.

IHS

Datasheet12 pagine15 anni fa
Datasheet11 pagine15 anni fa

element14 APAC

iiiC

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Parti alternative

Questo componente
Parti alternative
InfineonIRLR3114ZPBF
InfineonIRLR3114ZTRPBF
InfineonIRLR3114ZTRPBF
Price @ 1000
$ 2.07
$ 0.537
$ 0.537
Stock
628,292
925,570
925,570
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
2.5 V
1 V
1 V
Rds On Max
4.9 mΩ
4.9 mΩ
4.9 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
140 W
140 W
140 W
Input Capacitance
3.81 nF
3.81 nF
3.81 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15

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PowerTrench® MOSFET, N-Channel, 40 V, 50 A, 4.1 mΩ
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onsemiFDD8444L
Trans MOSFET N-CH 40V 16A 3-Pin(2+Tab) TO-252 T/R
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Descrizioni

Descrizioni di Infineon IRLR3114ZPBF fornite dai suoi distributori.

Single N-Channel 40 V 4.9 mOhm 40 nC HEXFET® Power Mosfet - TO-252AA
Future Electronics
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Logic Level | Target Applications: AC-DC; Battery Operated Drive
Infineon
MOSFET, N D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Charge Qrr @ Tj = 25°C Typ:40nC; Current Id Max:42A; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:500A; Termination Type:SMD; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V
element14 APAC

Immagini

Infineon
Distrelec
element14
RS (Formerly Allied Electronics)
TME
Conrad
Distrelec
iiiC
Rochester Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLR3114ZPBF
  • SP001568538