Infineon IRLR120NTRPBF
$ 0.417
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLR120NTRPBF | 42.000 | 2K | 1d | ||||||||
| Newark | IRLR120NTRPBF | 4212 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRLR120NTRPBF | 1380 | 1 | |||||||||
| Future Electronics | IRLR120NTRPBF | 160.000 | 2K | Tape & Reel | ||||||||
| Rutronik | TMOSP12610 | 10.000 | 2K | 13h |
Cronologia dell'inventario
Tendenza a 3 mesi: +22.60%
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1 parte disponibile
Schede tecniche e documenti
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Scheda dati ufficiale2 anni fa
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Questo componente
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Price @ 1000
$ 0.417
$ 0.91
Stock
2,303,754
236,295
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
10 A
10 A
Threshold Voltage
2 V
-
Rds On Max
185 mΩ
185 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
39 W
48 W
Input Capacitance
440 pF
440 pF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-07-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonIRLR120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W
InfineonAUIRLR120NTRL
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
onsemiHUF76609D3S
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 10A DPAK
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Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Descrizioni
Descrizioni di Infineon IRLR120NTRPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W
Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-252AA, Surface Mount
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
N CHANNEL MOSFET, 100V, 10A, D-PAK; TRAN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
IRLR120NTRPBF,MOSFET, 100V, 11 A, 185 MOHM, 13.3 NC QG, LOGI
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:11A; Package/Case:D-PAK; Power Dissipation, Pd:39W; Continuous Drain Current - 100 Deg C:6.9A; Drain Source On Resistance @ 10V:185mohm ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 16 / Fall Time ns = 22 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +22.60%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance225 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance440 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance185 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation39 W
Rds On Max185 mΩ
Resistance185 mΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time23 ns
Turn-On Delay Time4 ns
Voltage Rating (DC)100 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità