Infineon IRLML6302TRPBF

Mosfet, Power; P-ch; Vdss -20V; Rds(on) 0.6 Ohm; Id -0.78A; MICRO3; Pd 540MW; Vgs +/-12V
$ 0.334
Obsolete
Pagina del produttoreScheda dati

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Schede tecniche e documenti

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.334
$ 0.099
Stock
13,525,223
241,403
Authorized Distributors
4
3
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
TO-236-3
Drain to Source Voltage (Vdss)
-20 V
-20 V
Continuous Drain Current (ID)
540 mA
780 mA
Threshold Voltage
-1.5 V
-
Rds On Max
600 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
540 mW
540 mW
Input Capacitance
97 pF
97 pF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2024-07-31
LTD Date2025-01-31

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NXP SemiconductorsPMV170UN,215
325mW(Ta),1.14W(Tc) 8V 1V@ 250¦ÌA 1.65nC@ 4.5 V 1N 20V 165m¦¸@ 1A,4.5V 83pF@10V SOT-23,TO-236AB
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Diodes Inc.DMG6968UQ-7
Transistor MOSFET N-CH 20V 6.5A 3-Pin SOT-23 T/R

Descrizioni

Descrizioni di Infineon IRLML6302TRPBF fornite dai suoi distributori.

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.6Ohm;ID -0.78A;Micro3;PD 540mW;VGS +/-12V
Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, MICRO3; Transistor Polarity:P Channel; Continuous Drain Current Id:-610mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:540mW; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-780mA; Package / Case:Micro3; Power Dissipation Pd:540mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:-4.5V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -780 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 12 / Fall Time ns = 22 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 540

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLML6302TRPBF
  • IRLML6302
  • IRLML6302*
  • IRLML6302TRPBF.
  • SP001574060