Infineon IRLML5103TRPBF
$ 0.13
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Cronologia dell'inventario
Tendenza a 3 mesi: -8.83%
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Price @ 1000
$ 0.13
$ 0.182
Stock
6,595,363
203,930
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vds)
-30 V
-30 V
Continuous Drain Current (ID)
540 mA
760 mA
Threshold Voltage
-1 V
-
Rds On Max
600 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
340 mW
540 mW
Input Capacitance
75 pF
75 pF
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1995-07-01
Lifecycle StatusProduction (Last Updated: 2 months ago)
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Diodes Inc.DMG3406L-7
Transistor: N-MOSFET; unipolar; 30V; 2.8A; 0,07ohm;1.4W; -55+150 st.C; SMD; SOT23
Descrizioni
Descrizioni di Infineon IRLML5103TRPBF fornite dai suoi distributori.
Infineon Technologies P-channel HEXFET power MOSFET, -30 V, -760 mA, SOT-23, IRLML5103TRPBF
MOSFET P-CH 30V 760MA SOT23 P-Channel 30 V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.6Ohm;ID -0.76A;Micro3;PD 540mW;VGS +/-20V
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single P-Channel 30 V 1 Ohm 5.1 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 540 mW
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, -30V, -0.61A, MICRO 3; Transistor Polarity: P Channel; Continuous Drain Current Id: 610mA; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; P
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -8.83%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)540 mA
Current Rating-610 mA
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vds)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance75 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation280 mW
Manufacturer Package IdentifierMicro(SOT23)
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Elements1
On-State Resistance600 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation340 mW
Rds On Max600 mΩ
Resistance600 mΩ
Rise Time8.2 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-1 V
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità