Infineon IRLML5103TRPBF

INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V
$ 0.121
Production
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Avnet
2
IRLML5103TRPBF300.0003K
21h
Newark
2
IRLML5103TRPBF15.5311Cut Tape
Arrow Electronics
3
IRLML5103TRPBF26.7261
Future Electronics
2
IRLML5103TRPBF741.0003KTape & Reel
Rochester ElectronicsIRLML5103TRPBF1.130.266
19h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRLML5103TRPBF.

IHS

Datasheet10 pagine12 anni fa
Datasheet9 pagine23 anni fa
Datasheet8 pagine14 anni fa
Datasheet8 pagine28 anni fa

Newark

element14 APAC

iiiC

RS (Formerly Allied Electronics)

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRLML5103TRPBF
InfineonIRLML5103GTRPBF
Price @ 1000
$ 0.121
$ 0.186
Stock
15,883,298
118,580
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
540 mA
760 mA
Threshold Voltage
-1 V
-
Rds On Max
600 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
340 mW
540 mW
Input Capacitance
75 pF
75 pF

Supply Chain

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1995-07-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Transistor: N-MOSFET; unipolar; 30V; 2.8A; 0,07ohm;1.4W; -55+150 st.C; SMD; SOT23
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Descrizioni

Descrizioni di Infineon IRLML5103TRPBF fornite dai suoi distributori.

INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V
Fly-Wing Technology
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.6Ohm;ID -0.76A;Micro3;PD 540mW;VGS +/-20V
RS (Formerly Allied Electronics)
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single P-Channel 30 V 1 Ohm 5.1 nC HEXFET® Power Mosfet - SOT-23
Future Electronics
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 540 mW
Distrelec
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
ComSIT Distribution GmbH
P Channel Mosfet, -30V, 760Ma, Sot-23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:760Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon Technologies IRLML5103TRPBF.
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon

Immagini

element14 APAC
RS
Augswan
reichelt
Farnell
element14 APAC
TME
element14
element14 APAC
Newark
Distrelec
Conrad
element14
Distrelec
Component Sense
TME
South Microelectronics
DKO Electronshik
Jameco
LCSC
LZChips
iiiC
Future Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLML5103TRPBF
  • IRLML5103
  • IRLML5103PBF
  • IRLML5103TRPBF.
  • SP001572946