Descrizioni di Infineon IRLML0100TRPBF fornite dai suoi distributori.
Power MOSFET, N Channel, 100 V, 1.6 A, 220 Milliohms, SOT-23, 3 Pins, Surface Mount
100V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
MOSFET Transistor; 100V; 1.6A; 1.3W; -55+150stc; SOT233
N CHANNEL MOSFET, 100V, 1.6A SOT-23; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A;
MOSFET, 100V, 1.6A, 220 MOHM, 2.5 NC QG, SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
100V 1.6A 1.3W 220m´Î@10V1.6A 2.5V@25Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:1.3W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRLML0100TRPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.