Infineon IRLHM620TRPBF
$ 0.665
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Cronologia dell'inventario
Tendenza a 3 mesi: -24.77%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-04
Lifecycle StatusProduction (Last Updated: 5 months ago)
Parti correlate
InfineonIRLHM630TRPBF
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Descrizioni
Descrizioni di Infineon IRLHM620TRPBF fornite dai suoi distributori.
Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
Infineon SCT
Power MOSFET, N Channel, 20 V, 40 A, 0.0022 ohm, PQFN, Surface Mount
MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3
Infineon N-Channel MOSFET, Vds=20V, 40A, PQFN Package, SMD
Mosfet,n Ch,diode,20V,26A,pqfn33; |Infineon Technologies IRLHM620TRPBF
MOSFET Operating temperature: -55...175 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 37 W
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -24.77%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.62 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.7 W
Rds On Max2.5 mΩ
Resistance3.5 MΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time57 ns
Turn-On Delay Time7.5 ns
Dimensions
Height900 µm
Length3.2766 mm
Width3.3 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità