Infineon IRL3705NPBF
$ 0.917
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -27.42%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo Infineon IRL3705NPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.917
$ 2.415
Stock
468,924
214,570
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
89 A
89 A
Threshold Voltage
2 V
1 V
Rds On Max
10 mΩ
10 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
170 W
170 W
Input Capacitance
3.6 nF
3.6 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2012-08-25
LTD Date2013-02-25
Parti correlate
InfineonAUIRL3705N
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
NXP SemiconductorsBUK9510-55A,127
Trans MOSFET N-CH 55V 75A Automotive 3-Pin(3+Tab) TO-220AB Rail
Descrizioni
Descrizioni di Infineon IRL3705NPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS +/-16V
Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:89A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -27.42%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)89 A
Current Rating89 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance10 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation170 W
Rds On Max10 mΩ
Recovery Time140 ns
Resistance12 mΩ
Rise Time140 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time37 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height19.15 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità