Infineon IRL1404PBF
$ 1.11
Obsolete
Prezzo e stock
Distributori autorizzati
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
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|---|---|---|---|
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-02-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-12-28
LTD Date2013-06-28
Parti correlate
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40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
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Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
InfineonIRFB7440PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Descrizioni
Descrizioni di Infineon IRL1404PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4 Milliohms;ID 160A;TO-220AB;PD 200W;gFS 93S
Single N-Channel 40 V 4 mOhm 140 nC HEXFET® Power Mosfet - TO-220-3
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 200 W
Trans MOSFET N-CH 40V 160A 3-Pin(3+Tab) TO-220AB
HEXFET POWER MOSFET Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:160A; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:640A; SMD Marking:IRL1404PBF; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)160 A
Current Rating160 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.59 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max4 mΩ
Recovery Time94 ns
Resistance4 MΩ
Rise Time270 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time38 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)40 V
Dimensions
Height20.57 mm
Length10.5156 mm
Width4.69 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità