Infineon IRG8P25N120KDPBF

Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube
$ 2.69
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Rochester ElectronicsIRG8P25N120KDPBF13.743
18h
FarnellIRG8P25N120KDPBF01
4h
Worldway ElectronicsIRG8P25N120KDPBF10.1727Bulk
1d
Esaler ElectronicIRG8P25N120KDPBF76
3d
Win SourceWS-IRG8P25N120KDPBF17.179
19h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRG8P25N120KDPBF.

IHS

Datasheet11 pagine11 anni fa

Cronologia dell'inventario

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-09-01
LTD Date2017-03-01

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Descrizioni

Descrizioni di Infineon IRG8P25N120KDPBF fornite dai suoi distributori.

Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube
Verical
IGBT, SINGLE, 1.2KV, 40A, TO-247AC-3
element14 APAC
IGBT WITH ULTRAFAST SOFT RECOVER
Vigor Components
G8, 1200V, 25A, COPAK-247AC, TUBE
Newark
Insulated Gate Bipolar Transistor
IHS
IGBT, SINGLE, 1.2KV, 40A, TO-247AC-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No.
Farnell

Immagini

Newark
element14 APAC
TME
Farnell
TME
Rochester Electronics

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