Infineon IRG4PH40UDPBF

Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube

Copacked 1200V IGBT in a TO-247AC package with a ultrafast 5-40 kHz soft recovery diode, TO247COPAK-3, RoHS

IRG4PH40UDP Series 1200 V 12 A Insulated Gate Bipolar Transistor - TO-247AC

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

IGBT 1200V 21A 2,43V TO247 RoHSconf

IRG4PH40 DISCRETE IGBT WITH ANTI-PARALL;

Target Applications: Solar; Welding

IC BUF NON-INVERT 5.25V 20SOIC

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)

IRG4PH40U - 1200V ULTRAFAST 5-40

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:41A; Collector Emitter Saturation Voltage, Vce(sat):3.1V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40UD; Fall Time Max:150ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:59ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV