Infineon IRG4PH30KDPBF
Obsolete
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Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-06-30
LTD Date2020-12-31
Parti correlate
InfineonIRG4PH40UD2-EP
TRANSISTOR,IGBT,N-CHAN+DIODE,1.2kV V(BR)CES,41A I(C),TO-247AD ;RoHS Compliant: Yes
InfineonIRG4PH40KDPBF
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
LittelfuseIXDH20N120D1
IXDH20N120D1 Series 1200 V 38 A N-Channel High Voltage IGBT - TO-247AD
onsemiFGH40T120SMD-F155
IGBT 1200V 80A 555W TO247-3 / Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube
Descrizioni
Descrizioni di Infineon IRG4PH30KDPBF fornite dai suoi distributori.
Inductor RF Chip Thin Film 4.2nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R
IRG4PH30KDPBF Series 1200 V 10 A N-Channel UltraFast IGBT - TO-247AC
SHORT CIRCUIT RATED ULTRAFAST INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) | IGBT 1200V 20A 100W TO247AC
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
SINGLE IGBT, 1.2KV, 20A; Transistor Type; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Typ:97ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:79ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage3.1 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current20 A
Current Rating20 A
Element ConfigurationSingle
Fall Time140 ns
Max Collector Current20 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity400
PackagingBulk
Power Dissipation100 W
Reverse Recovery Time50 ns
Rise Time84 ns
TerminationThrough Hole
Turn-Off Delay Time220 ns
Turn-On Delay Time39 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height24.99 mm
Length15.87 mm
Width5.3086 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità