Infineon IRG4IBC30SPBF
$ 1.11
Obsolete
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SKU
Min
Pkg
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRG4IBC30SPBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-02
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2009-08-19
LTD Date2010-02-19
Parti correlate
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STGF15Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
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IGBT 600V 20A 101W TO220AB IGBT Trench 600 V 20 A 101 W Through Hole TO-220AB
STMicroelectronicsSTGP15H60DF
IGBT 600V 30A 115W TO220 / Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220AB Tube
InfineonIRG6IC30UPBF
IGBT 600V 25A 37W TO220ABFP IGBT Trench 600 V 25 A 37 W Through Hole TO-220AB Full-Pak
STMicroelectronicsSTGF10H60DF
30W 20A 600V FS(Field Stop) TO-220FP IGBT Transistors / Modules ROHS
Descrizioni
Descrizioni di Infineon IRG4IBC30SPBF fornite dai suoi distributori.
Trans IGBT Chip N-CH 600V 23.5A 3-Pin(3+Tab) TO-220 Full-Pak Tube
IGBT 600V 23.5A 45W TO220FP IGBT 600 V 23.5 A 45 W Through Hole TO-220AB Full-Pak
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220 FullPak package
IRG4IBC30SPbF Series 600 V 18 A N-Channel IGBT - TO-220 Full-Pak
Insulated Gate Bipolar Transistor, 23.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 600V, 23.5A, TO-220FP; Transistor Type:IGBT; DC Collector Current:23.5A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:45W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:23.5A; Fall Time Max:19ns; Package / Case:TO-220FP; Power Dissipation Max:45W; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulsed Current Icm:68A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
0 modelli disponibili
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0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.299997 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)600 V
Current Rating23.5 A
Element ConfigurationDual
Fall Time590 ns
Max Collector Current23.5 A
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation45 W
Rise Time19 ns
TerminationThrough Hole
Turn-Off Delay Time540 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)600 V
Dimensions
Height16.12 mm
Length10.6172 mm
Width4.826 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRG4IBC30SPBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità