Infineon IRG4BC20SDPBF

Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220AB
$ 2.225
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Rochester ElectronicsIRG4BC20SDPBF13
15h
RS (Formerly Allied Electronics)IRG4BC20SDPBF0200Bulk
7h
Microchip USAIRG4BC20SD212600Tray
8h
Component Stockers USAIRG4BC20SDPBF17
1d
Win SourceWS-IRG4BC20SDPBF424050
16h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRG4BC20SDPBF.

IHS

Datasheet10 pagine16 anni fa
Datasheet10 pagine16 anni fa

Newark

DigiKey

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-12-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon IRG4BC20SDPBF fornite dai suoi distributori.

Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220AB
Verical
600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB package
International Rectifier
Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
IGBT, 600V, 19A, TO-220; Transistor Type:IGBT; DC Collector Current:19A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:19A; Fall Time Max:35ns; Package / Case:TO-220AB; Power Dissipation Max:60W; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulsed Current Icm:38A; Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
element14 APAC

Immagini

Infineon
Augswan
TME
RS
Farnell
Newark
International Rectifier

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Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRG4BC20SDPBF
  • IRG4BC20SD
  • SP001541346