Infineon IRG4BC10SD-SPBF
$ 2.605
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-06-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
STMicroelectronicsSTGB7H60DF
H Series 600 V 7 A Surface Mount Trench Gate Field-Stop IGBT - D2PAK
onsemiHGT1S3N60A4DS9A
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Descrizioni
Descrizioni di Infineon IRG4BC10SD-SPBF fornite dai suoi distributori.
IRG4BC10SD-SPBF, IGBT Transistor, 14 A 600 V, 1kHz, 3-Pin D2PAK
Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) D2PAK Tube
Fixed Inductors 120μH NO ±5% 1812 (4532 Metric) Tape & Reel (TR) 1MHz 3Ohm Max LQH43 Surface Mount FIXED IND 120UH 150MA 3 OHM SMD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) | IGBT 600V 14A 38W D2PAK
STANDARD SPEED COPACK INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:14A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:38W; Package/Case:D2PAK ;RoHS Compliant: Yes
IGBT, D2-PAK; DC Collector Current:14A; Collector Emitter Saturation Voltage Vce(on):1.58V; Power Dissipation Pd:38W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Te
IGBT, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Current Ic Continuous a Max:14A; Voltage, Vce Sat Max:1.8V; Power Dissipation:38W; Case Style:D2-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; No. of Pins:3; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:1080ns; Time, Rise:36ns; Transistors, No. of:1
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)600 V
Current Rating14 A
Element ConfigurationSingle
Fall Time1.08 µs
Max Collector Current14 A
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation38 W
Reverse Recovery Time28 ns
Schedule B8541290080
Voltage Rating (DC)600 V
Dimensions
Height4.699 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità