Infineon IRFZ48NSTRLPBF
$ 0.647
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Distributore
SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFZ48NSTRLPBF.
Modelli CAD
Scarica il simbolo Infineon IRFZ48NSTRLPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-19
Lifecycle StatusProduction (Last Updated: 2 months ago)
Parti correlate
InfineonIRFZ48NSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS +/-20V
InfineonIRFZ44NSTRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20
STMicroelectronicsSTB60NF06LT4
N-channel 60 V, 0.012 Ohm typ., 60 A STripFET II Power MOSFET in a D2PAK package
STMicroelectronicsSTB60NF06T4
N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
Descrizioni
Descrizioni di Infineon IRFZ48NSTRLPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS +/-20V
Single N-Channel 55V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK T/R
Power MOSFET, N Channel, 55 V, 64 A, 0.014 ohm, TO-263AB, Surface Mount
MOSFET, N-CH, 55V, 64A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:64A; Package/Case:D2-PAK; Power Dissipation, Pd:140W; Continuous Drain Current - 100 Deg C:45A; Drain Source On Resistance @ 10V:14mohm ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 64 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 14 / Gate-Source Voltage V = 20 / Fall Time ns = 50 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)64 A
Current Rating64 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.97 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance14 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time78 ns
Schedule B8541290080
Turn-Off Delay Time34 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFZ48NSTRLPBF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità