Infineon IRFZ48NSPBF

Name: Infineon IRFZ48NSPBF
Brand: Infineon
SKU: IRFZ48NSPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 14 Milliohms; ID 64A; D2Pak; PD 130W; VGS +/-20V

$ 1.81

Obsolete

Pagina del produttore Scheda dati

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFZ48NSPBF	0	600	Bulk			1,810	1,810	11h
Farnell	IRFZ48NSPBF	0	5		1,464*	0,957*	0,624*	0,610*	4h
Sensible Micro	IRFZ48NSPBF	941				0,540	0,500	0,500	6d
Win Source	WS-IRFZ48NSPBF	16.000	145				0,300	0,269	20h
Worldway Electronics	IRFZ48NSPBF	8465	7	Tube	0,573	0,555	0,526	0,526	18h

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFZ48NSPBF.

IHS

Datasheet11 pagine22 anni fa

Datasheet12 pagine22 anni fa

Newark

RS (Formerly Allied Electronics)

DigiKey

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-08-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

Parti correlate

InfineonIRFZ44ZSPBF

HEXFET® Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mΩ , ID = 51A ) | MOSFET N-CH 55V 51A D2PAK

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MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;D2Pak;PD 110W;VGS +/-20

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STMicroelectronicsSTB60NF06T4

N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET

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STMicroelectronicsSTB55NF06T4

N-Channel 60V - 0.017Ohm - 50A - D2PAK StripFET(TM) II POWER MOSFET

Dettagli

Descrizioni

Descrizioni di Infineon IRFZ48NSPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Inductor Power Shielded Wirewound 22uH 20% 1MHz Ferrite 0.55A 0.822Ohm DCR 1210 Automotive T/R

Utmel Electronic

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 130 W

Distrelec

Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK Tube

Verical

Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:700mJ; Capacitance Ciss Typ:1970pF; Current Id Max:64A; Package / Case:D2-PAK; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:210A; Reverse Recovery Time trr Typ:100ns; SMD Marking:Z48NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC

Immagini

RS (Formerly Allied Electronics)

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

SP001552504

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageD2PAK

MountSurface Mount

Number of Pins3

Number of Terminals2

Technical

Continuous Drain Current (ID)64 A

Current Rating64 A

Drain to Source Breakdown Voltage55 V

Drain to Source Resistance14 mΩ

Drain to Source Voltage (Vdss)55 V

Dual Supply Voltage55 V

Element ConfigurationSingle

Fall Time50 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.97 nF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation130 W

Min Breakdown Voltage55 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Elements1

On-State Resistance14 mΩ

Package Quantity1000

PackagingBulk

Power Dissipation3.8 W

Rds On Max14 mΩ

Recovery Time100 ns

Reverse Recovery Time100 ns

Rise Time78 ns

TerminationSMD/SMT

Threshold Voltage4 V

Turn-Off Delay Time34 ns

Turn-On Delay Time12 ns

Voltage Rating (DC)55 V

Dimensions

Height4.826 mm

Length10.668 mm

Width9.65 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFZ48NSPBF.

IHS

Datasheet11 pagine22 anni fa

Datasheet12 pagine22 anni fa

Newark

RS (Formerly Allied Electronics)

DigiKey

Conformità

Classificazione ambientale

Lead FreeLead Free

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Conflict Mineral StatementN/AN/A

Reach Statement6 pagine12 anni fa

Rohs Statement1 pagina12 anni fa