Infineon IRFZ46NLPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.0165 Ohm; Id 53A; TO-262; Pd 107W; Vgs +/-20V
$ 0.654
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Rochester ElectronicsIRFZ46NLPBF3730
5h
RS (Formerly Allied Electronics)IRFZ46NLPBF0700Bulk
22h
FarnellIRFZ46NLPBF01
5h
Mouser942-IRFZ46NLPBF7291Tube
Microchip USAIRFZ46NL302600Tube
23h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFZ46NLPBF.

IHS

Datasheet12 pagine22 anni fa
Datasheet11 pagine22 anni fa

Newark

RS (Formerly Allied Electronics)

DigiKey

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRFZ46NLPBF
InfineonAUIRFZ46NL
Price @ 1000
$ 0.654
$ 2.37
Stock
194,272
56,950
Authorized Distributors
4
1
Mount
Through Hole
Through Hole
Case/Package
TO-262
TO-262
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
39 A
39 A
Threshold Voltage
4 V
-
Rds On Max
16.5 mΩ
16.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
107 W
Input Capacitance
1.696 nF
1.696 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-08-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31

Parti correlate

InfineonIRFZ44NLPBF
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262
Dettagli
InfineonIRFZ44ZLPBF
Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-262-3
Dettagli
InfineonIRFSL3806PBF
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-262-3
Dettagli

Descrizioni

Descrizioni di Infineon IRFZ46NLPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0165Ohm;ID 53A;TO-262;PD 107W;VGS +/-20V
RS (Formerly Allied Electronics)
Single N-Channel 55 V 16.5 mOhm 48 nC HEXFET® Power Mosfet - TO-262
Future Electronics
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon

Immagini

Infineon
TME
Newark
Rochester Electronics
Future Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFZ46NL
  • SP001557896