Infineon IRFU3710ZPBF
$ 2.35
Obsolete
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Min
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Cronologia dell'inventario
Trend storico dell'inventario non disponibile
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0 modelli disponibili
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFU3710ZPBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-31
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2017-10-12
LTD Date2018-04-12
Descrizioni
Descrizioni di Infineon IRFU3710ZPBF fornite dai suoi distributori.
MOSFET, N Ch., Automotive, 100V, 56A, 18 MOHM, 69 NC QG, I-PAK, Pb-Free
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, TO-251-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-251; Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:220A; SMD Marking:IRFU3710ZPBF; Termination Type:Through Hole; Turn Off Time:53ns; Turn On Time:14ns; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Trend storico dell'inventario non disponibile
Modelli CAD
0 modelli disponibili
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.93 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance18 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation140 W
Rds On Max18 mΩ
Recovery Time53 ns
Resistance18 MΩ
Rise Time43 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)100 V
Dimensions
Height6.1 mm
Lead Length9.65 mm
Lead Pitch2.28 mm
Length6.6 mm
Width2.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFU3710ZPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità