Infineon IRFTS9342TRPBF
$ 0.141
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -12.23%
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-29
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
Parti correlate
NXP SemiconductorsPMN38EN,135
Power Field-Effect Transistor, 5.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
VishaySI3456DDV-T1-E3
Single N-Channel 30 V 0.04 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
Descrizioni
Descrizioni di Infineon IRFTS9342TRPBF fornite dai suoi distributori.
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Infineon SCT
Single P-Channel 30 V 66 mOhm 12 nC HEXFET® Power Mosfet - TSOP-6
Trans MOSFET P-CH 30V 5.8A 6-Pin TSOP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 5.8A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.3V; Power Dissipation:2W; No. Of Pins:6Pins Rohs Compliant: Yes |Infineon IRFTS9342TRPBF.
MOSFET, P-CH, 30V, 5.8A, 6TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -12.23%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)5.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)-30 V
Fall Time28 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance595 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance40 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max40 mΩ
Recovery Time30 ns
Resistance40 MΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage-1.3 V
Turn-Off Delay Time45 ns
Turn-On Delay Time4.6 ns
Dimensions
Height1.45 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFTS9342TRPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità