Infineon IRFSL7762PBF
$ 1.228
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-08-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-12
LTD Date2018-04-12
Parti correlate
InfineonIRFSL7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
InfineonIRF3205LPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Descrizioni
Descrizioni di Infineon IRFSL7762PBF fornite dai suoi distributori.
IRFSL7762PBF N-channel MOSFET Transistor, 85 A, 75 V, 3-Pin TO-262
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 85A I(D), 75V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N-CH, 75V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; P
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)85 A
Drain to Source Resistance6.7 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.44 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance6.7 mΩ
Package Quantity1000
Power Dissipation140 W
Rds On Max6.7 mΩ
Rise Time49 ns
Threshold Voltage3.7 V
Turn-Off Delay Time57 ns
Turn-On Delay Time11 ns
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità