Infineon IRFSL7540PBF
$ 1.17
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-16
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2022-09-22
LTD Date2022-09-22
Parti correlate
InfineonIRFSL3306PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
InfineonIRFSL3207ZPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.3Milliohms;ID 170A;TO-262;PD 300W;VF 1.3V
Descrizioni
Descrizioni di Infineon IRFSL7540PBF fornite dai suoi distributori.
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
Infineon SCT
MOSFET N-CH 60V 110A TO262 / N-Channel 60 V 110A (Tc) 160W (Tc) Through Hole TO-262
Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
160W(Tc) 20V 3.7V@ 100µA 130nC@ 10 V 1individualNChannel 60V 5.1mΩ@ 65A,10V 110A 4.555nF@25V TO-262 Through hole mounting 10.2mm*4.5mm*9.45mm
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
0 models available
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0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.555 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.1 mΩ
Package Quantity1000
Power Dissipation160 W
Rds On Max5.1 mΩ
Rise Time76 ns
Threshold Voltage3.7 V
Turn-Off Delay Time58 ns
Turn-On Delay Time12 ns