Infineon IRFSL7440PBF
$ 0.918
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +29.92%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-10
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
Parti correlate
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InfineonIRFSL4620PBF
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Descrizioni
Descrizioni di Infineon IRFSL7440PBF fornite dai suoi distributori.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
Infineon SCT
MOSFET N CH 40V 120A TO-262 / N-Channel 40 V 120A (Tc) 208W (Tc) Through Hole TO-262
Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - TO-262
Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
208W(Tc) 20V 3.9V@ 100µA 135nC@ 10 V 1individualNChannel 40V 2.5mΩ@ 100A,10V 120A 4.73nF@25V TO-262 Through hole mounting 10.2mm*4.5mm*9.45mm
MOSFET, N-CH, 40V, 120A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +29.92%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High175 °C
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.73 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation208 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity1000
Power Dissipation208 W
Rds On Max2.5 mΩ
Resistance2.5 MΩ
Rise Time68 ns
Threshold Voltage3 V
Turn-Off Delay Time115 ns
Turn-On Delay Time24 ns
Dimensions
Height15.1 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità