Infineon IRFS4310ZPBF
$ 5.45
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFS4310ZPBF | 0 | 1 | Bulk | 19h | |||||||
| Farnell | IRFS4310ZPBF | 0 | 1 | 1d | ||||||||
| Weyland Electronics Group Pte. Ltd. | IRFS4310ZPBF | 345 | 1 | Tape & Reel | 5h | |||||||
| Win Source | WS-IRFS4310ZPBF | 22.370 | 55 | 3h | ||||||||
| Worldway Electronics | IRFS4310ZPBF | 15.304 | 7 | Tube | 2h |
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 5.45
$ 1.026
$ 1.026
Stock
703,528
710,476
710,476
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
120 A
120 A
120 A
Threshold Voltage
4 V
-
-
Rds On Max
6 mΩ
6 mΩ
6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
250 W
250 W
250 W
Input Capacitance
6.86 nF
6.86 nF
6.86 nF
Supply Chain
Country of OriginUK
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-11-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
InfineonIRF1407STRLPBF
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK
STMicroelectronicsSTB140NF75T4
STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
STMicroelectronicsSTB120NF10T4
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in D2PAK package
Descrizioni
Descrizioni di Infineon IRFS4310ZPBF fornite dai suoi distributori.
Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel IR MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET, N Ch., 100V, 127A, 6 MOHM, 120 NC QG, D2-PAK, Pb-Free
Trans MOSFET N-CH 100V 127A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:127A; On Resistance, Rds(on):6mohm; Package/Case:D2-PAK; Current, Idm pulse:560A; Drain-Source Breakdown Voltage:100V ;RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.86 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance6 mΩ
Package Quantity1000
Power Dissipation250 W
Rds On Max6 mΩ
Recovery Time40 ns
Resistance6 MΩ
Rise Time60 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità