Infineon IRFS4115PBF
$ 1.34
Obsolete
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Questo componente
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Price @ 1000
$ 1.34
$ 1.869
Stock
258,774
640,270
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vds)
150 V
150 V
Continuous Drain Current (ID)
99 A
99 A
Threshold Voltage
5 V
-
Rds On Max
12.1 mΩ
12.1 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
5.27 nF
5.27 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-11
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
InfineonIRFS4115TRLPBF
MOSFET N-CH 150V 195A D2PAK N-Channel 150 V 195A (Tc) 375W (Tc) Surface Mount D2PAK
InfineonIRFS4321TRLPBF
Single N-Channel 150 V 360 W 71 nC Hexfet Power Mosfet Surface Mount - D2PAK
onsemiFDB075N15A
Power MOSFET, N Channel, 150 V, 130 A, 0.0075 ohm, TO-263 (D2PAK), Surface Mount
Descrizioni
Descrizioni di Infineon IRFS4115PBF fornite dai suoi distributori.
Single N-Channel 150 V 12.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
MOSFET N-CH 150V 195A D2PAK N-Channel 150 V 195A (Tc) 375W (Tc) Surface Mount D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 195A 3-Pin(2+Tab) D2PAK Tube
HEXFET Power MOSFET Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH 150V 99A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:99A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)99 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance12.1 mΩ
Drain to Source Voltage (Vds)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.27 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance12.1 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max12.1 mΩ
Resistance12.1 MΩ
Rise Time73 ns
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time41 ns
Turn-On Delay Time18 ns
Dimensions
Height19.6 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità