Infineon IRFS4020PBF
$ 1.53
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.53
$ 1.407
Stock
67,888
132,400
Authorized Distributors
2
3
Mount
Surface Mount, Through Hole
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
18 A
18 A
Threshold Voltage
4.9 V
-
Rds On Max
105 mΩ
105 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
100 W
100 W
Input Capacitance
1.2 nF
1.2 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-05-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Parti correlate
InfineonIRF3315SPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55
InfineonIPB17N25S3100ATMA1
Power MOSFET, N Channel, 250 V, 17 A, 100 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
Descrizioni
Descrizioni di Infineon IRFS4020PBF fornite dai suoi distributori.
200V Single N-Channel Digital Audio HEXFET Power MOSFET Switch in a D2Pak package
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK Tube
DIGITAL AUDIO MOSFET Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 200V, 18A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:18A; Package / Case:D2-PAK; Power Dissipation Pd:100W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time6.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4.9 V
Number of Elements1
On-State Resistance105 mΩ
Package Quantity1000
Power Dissipation100 W
Rds On Max105 mΩ
Recovery Time120 ns
Rise Time12 ns
TerminationSMD/SMT
Threshold Voltage4.9 V
Turn-Off Delay Time16 ns
Turn-On Delay Time7.8 ns
Dimensions
Height4.83 mm
Length10.668 mm
Width4.826 mm