Infineon IRFR7740PBF

Single N-Channel 75 V 7.2 mOhm 84 nC HEXFET® Power Mosfet - DPAK
$ 2.29
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR7740PBF.

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Questo componente
Parti alternative
Price @ 1000
$ 2.29
$ 1.95
Stock
16,342
127,174
Authorized Distributors
2
2
Mount
Surface Mount, Through Hole
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
87 A
87 A
Threshold Voltage
3.7 V
3.7 V
Rds On Max
7.2 mΩ
7.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
4.43 nF
4.43 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-08-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon IRFR7740PBF fornite dai suoi distributori.

Single N-Channel 75 V 7.2 mOhm 84 nC HEXFET® Power Mosfet - DPAK
75V Single N-Channel HEXFET Power MOSFET in a D-PAK package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 87A I(D), 75V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 75V, 87A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 87A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

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Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • SP001571546