Infineon IRFR7440PBF
$ 1.39
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.39
$ 0.649
Stock
313,704
1,356,366
Authorized Distributors
2
5
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
90 A
90 A
Threshold Voltage
3 V
3 V
Rds On Max
2.4 mΩ
2.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
4.61 nF
4.61 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
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InfineonAUIRFR8405
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Descrizioni
Descrizioni di Infineon IRFR7440PBF fornite dai suoi distributori.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 40V, 90A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:140W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.61 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max2.4 mΩ
Recovery Time34 ns
Rise Time39 ns
Threshold Voltage3 V
Turn-Off Delay Time51 ns
Turn-On Delay Time11 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità