Infineon IRFR5410TRLPBF

Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.205 Ohm; Id -13A; D-pak (TO-252AA); Pd 66W
$ 0.666
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Arrow ElectronicsIRFR5410TRLPBF141
RS (Formerly Allied Electronics)IRFR5410TRLPBF03KBulk
5h
Farnell
2
IRFR5410TRLPBF01Cut Tape
16h
Mouser942-IRFR5410TRLPBF86871Tape & Reel
Win SourceWS-IRFR5410TRLPBF51.480135
16h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR5410TRLPBF.

Newark

Datasheet11 pagine21 anni fa

IHS

RS (Formerly Allied Electronics)

DigiKey

Cronologia dell'inventario

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15

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MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
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Descrizioni

Descrizioni di Infineon IRFR5410TRLPBF fornite dai suoi distributori.

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
RS (Formerly Allied Electronics)
Single P-Channel 100V 0.205 Ohm 58 nC HEXFET® Power Mosfet - TO-252AA
Future Electronics
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; On Resistance Rds(On):0.205Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 13 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 205 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 66
Distrelec

Immagini

Infineon
Newark
element14 APAC
Distrelec
TME
RS
Future Electronics

Alias del produttore

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  • Infineon Technologies
  • INF
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  • INFIN
  • INFINION
  • INFI
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  • INFIEON
  • INFINEON TECH
  • INFINEN
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  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
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  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFR5410TRLPBF.
  • SP001578112