Infineon AUIRFR5410
$ 1.7
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-12-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-01-31
LTD Date2021-07-31
Parti correlate
InfineonIRFR5410TRPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
InfineonIRFR5410TRLPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
InfineonIRFR5410PBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
onsemiHUF76609D3S
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 10A DPAK
Descrizioni
Descrizioni di Infineon AUIRFR5410 fornite dai suoi distributori.
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 100V 13A Automotive 3-Pin(2+Tab) DPAK Tube
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET,W DIODE,P CH,100V,13A,DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.205ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Voltage Vgs Max:-20V
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance205 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance205 mΩ
Package Quantity3000
Power Dissipation66 W
Rds On Max205 mΩ
Rise Time58 ns
Schedule B8541290080
Threshold Voltage-2 V
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità