Infineon IRFR4510TRPBF
$ 0.89
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRFR4510TRPBF | 5295 | 1 | |||||||||
| Rochester Electronics | IRFR4510TRPBF | 11.500 | 18h | |||||||||
| Future Electronics | IRFR4510TRPBF | 0 | 2K | Tape & Reel | ||||||||
| RS (Formerly Allied Electronics) | IRFR4510TRPBF | 0 | 2K | Bulk | 11h | |||||||
| Avnet | IRFR4510TRPBF | 0 | 2K | 2d |
Cronologia dell'inventario
Tendenza a 3 mesi: -14.61%
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR4510TRPBF.
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Questo componente
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Price @ 1000
$ 0.89
$ 0.8
Stock
535,082
127,005
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
3 V
3 V
Rds On Max
13.9 mΩ
13.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
143 W
143 W
Input Capacitance
3.031 nF
3.031 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-05-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Mosfet, N-Ch, 100V, 60A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60N10S412ATMA1
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N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in DPAK package
InfineonIPD60N10S4L12ATMA1
IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313
InfineonIRFR7746TRPBF
75V Single N-Channel HEXFET Power MOSFET in a D-PAK package, DPAK-3, RoHS
Descrizioni
Descrizioni di Infineon IRFR4510TRPBF fornite dai suoi distributori.
TRANSISTOR, HEXFET POWER MOSFET, N-CHANNEL, 100V , 63A, 13.9MOHM MAX, D-PAK
Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3
Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK T/R / MOSFET N CH 100V 56A DPAK
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 56A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 100V, 63A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:143W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 63 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 13.9 / Gate-Source Voltage V = 20 / Fall Time ns = 34 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 143
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -14.61%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance13.9 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.031 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation143 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance13.9 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation143 W
Rds On Max13.9 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time42 ns
Turn-On Delay Time18 ns
Dimensions
Height2.52 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR4510TRPBF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità