Infineon IRFR4104TRPBF

Single N-Channel 40V 5.5 mOhm 59 nC HEXFET® Power Mosfet - TO-252AA
$ 0.596
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
NewarkIRFR4104TRPBF52031Cut Tape
Arrow Electronics
3
IRFR4104TRPBF40321
Future Electronics
2
IRFR4104TRPBF20002KTape & Reel
Rochester ElectronicsIRFR4104TRPBF1923
14h
DigiKey
2
IRFR4104PBFCT-ND36831Cut Tape

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR4104TRPBF.

IHS

Datasheet11 pagine15 anni fa

Newark

iiiC

DigiKey

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRFR4104TRPBF
InfineonAUIRFR4104
InfineonAUIRFR4104
Price @ 1000
$ 0.596
$ 1.1
$ 1.1
Stock
705,166
232,624
232,624
Authorized Distributors
6
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
-
2 V
2 V
Rds On Max
5.5 mΩ
5.5 mΩ
5.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
140 W
140 W
140 W
Input Capacitance
2.95 nF
2.95 nF
2.95 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-07-17
Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

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MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 42A;D-Pak (TO-252AA);-55deg
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onsemiFDD9410-F085
PowerTrench® MOSFET, N-Channel, 40 V, 50 A, 4.1 mΩ
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Descrizioni

Descrizioni di Infineon IRFR4104TRPBF fornite dai suoi distributori.

Single N-Channel 40V 5.5 mOhm 59 nC HEXFET® Power Mosfet - TO-252AA
Future Electronics
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Semicontronic
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
Infineon
MOSFET, N-CH, 40V, 42A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 140W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Farnell
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 119 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 5.5 / Gate-Source Voltage V = 20 / Fall Time ns = 36 / Rise Time ns = 69 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140
Distrelec

Immagini

Infineon
Augswan
Farnell
TME
Distrelec
iiiC
Future Electronics
Newark
LZChips
Rochester Electronics

Alias del produttore

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • SP001571578