Infineon IRFR3910TRPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.115 Ohm; Id 16A; D-pak (TO-252AA); Pd 79W
$ 0.53
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
AvnetIRFR3910TRPBF40002K
17h
Newark
2
IRFR3910TRPBF15865Cut Tape
Future Electronics
3
IRFR3910TRPBF242.0002KTape & Reel
Arrow Electronics
3
IRFR3910TRPBF30531
RutronikTMOSP1232120002K
22h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR3910TRPBF.

IHS

Datasheet11 pagine21 anni fa

Newark

RS (Formerly Allied Electronics)

Jameco

iiiC

Cronologia dell'inventario

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30

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Descrizioni

Descrizioni di Infineon IRFR3910TRPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.115Ohm;ID 16A;D-Pak (TO-252AA);PD 79W
RS (Formerly Allied Electronics)
Power MOSFET, N Channel, 100 V, 16 A, 0.115 ohm, TO-252AA, Surface Mount
Avnet
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
IRFR3910TRPBF,MOSFET, 100V, 15 A, 115 MOHM, 29.3 NC QG, D-PA
Jameco
HEXFET POWER MOSFET Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ComSIT Distribution GmbH
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:79W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFR3910TRPBF.
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 16 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 115 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79
Distrelec

Immagini

Infineon
element14
Farnell
RS (Formerly Allied Electronics)
TME
iiiC
Future Electronics
LZChips
Rochester Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFR3910TRPBF.
  • SP001560674