Infineon IRFR3410PBF
$ 1.33
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
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STMicroelectronicsSTD30N10F7
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onsemiNVD6495NLT4G
N-Channel Logic Level Power MOSFET 100V, 25A, 50mΩ Automotive Power MOSFET 100V Logic Level
Descrizioni
Descrizioni di Infineon IRFR3410PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-252AA
IRFR3410PBF,MOSFET, 100V, 31A, 39 MOHM, 37 NC QG, D-PAK<AZ
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 100V, 31A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; SMD Marking:IRFR3410; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating31 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance39 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.69 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance39 mΩ
Package Quantity3000
Power Dissipation3 W
Rds On Max39 mΩ
Resistance39 MΩ
Rise Time27 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)100 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità