Infineon IRFR3303TRPBF
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
Scarica il simbolo Infineon IRFR3303TRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.95
Stock
219,363
175,462
Authorized Distributors
2
1
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
20 A
20 A
Threshold Voltage
-
-
Rds On Max
31 mΩ
31 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
57 W
57 W
Input Capacitance
750 pF
750 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
InfineonIRFR3303PBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
InfineonIPD30N03S2L20ATMA1
IPD30N03S2L20ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS, 3-Pin DPAK Infineon
Descrizioni
Descrizioni di Infineon IRFR3303TRPBF fornite dai suoi distributori.
Single N-Channel 30 V 0.031 Ohm 29 nC HEXFET® Power Mosfet - TO-252AA
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):31mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating33 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance750 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation57 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance31 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation57 W
Rds On Max31 mΩ
Resistance31 mΩ
Rise Time99 ns
Schedule B8541290080
Turn-Off Delay Time16 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità