Infineon IRFR2607ZPBF
$ 0.65
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.65
$ 0.701
Stock
40,040
465,089
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
4 V
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
110 W
110 W
Input Capacitance
1.44 nF
1.44 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
InfineonIPD088N06N3GBTMA1
Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount
Descrizioni
Descrizioni di Infineon IRFR2607ZPBF fornite dai suoi distributori.
INFINEON IRFR2607ZPBF MOSFET Transistor, N Channel, 42 A, 75 V, 22 mohm, 10 V, 4 V
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 17.6 Milliohms;ID 42A;D-Pak (TO-252AA);-55de
Single N-Channel 75 V 22 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET, IPS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:75V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Base Number:2607; Current Id Max:42A; Current Idss Max:250mA; Current Idss Min:20mA; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:80A; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Turn Off Time:39ns; Turn On Time:14ns; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Current Rating45 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.44 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity3000
Power Dissipation110 W
Resistance22 MΩ
Rise Time59 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)75 V
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità