Infineon IRFR1018ETRPBF
$ 0.47
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Schede tecniche e documenti
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Price @ 1000
$ 0.47
$ 7.96
Stock
788,661
145,415
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
-
2 V
Rds On Max
8.4 mΩ
8.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
110 W
110 W
Input Capacitance
2.29 nF
2.29 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonIRFR1010ZTRLPBF
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
onsemiFDD10AN06A0
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
Diodes Inc.DMTH6010SK3-13
Mosfet, N-Ch, 60V, 70A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH6010SK3-13
Descrizioni
Descrizioni di Infineon IRFR1018ETRPBF fornite dai suoi distributori.
Single N-Channel 60 V 8.4 mOhm 69 nC HEXFET® Power Mosfet - TO-252-3
Power MOSFET, N Channel, 60 V, 79 A, 0.0071 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:79A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:110W; No. of Pins:3Pins RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 8.4 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -2.57%
Modelli CAD
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Parti alternative
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Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.29 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8.4 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation110 W
Rds On Max8.4 mΩ
Rise Time35 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time13 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR1018ETRPBF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità