Infineon IRFP260MPBF

Trans MOSFET N-CH Si 200V 50A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 50A TO-247AC
$ 1.274
Production
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Avnet
2
IRFP260MPBF160025
5d
Newark
2
IRFP260MPBF.160025
Future Electronics
2
IRFP260MPBF80025Tube
Arrow Electronics
2
IRFP260MPBF62751
Rochester Electronics
2
IRFP260MPBF1035
12h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFP260MPBF.

IHS

Datasheet9 pagine5 anni fa

Newark

iiiC

Cronologia dell'inventario

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-01
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

Parti correlate

InfineonIRFP260NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V
Dettagli
InfineonIRFP250MPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
Dettagli
InfineonIRFP4227PBF
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
Dettagli
VishayIRFP240PBF
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-247AC
Dettagli
VishayIRFP250PBF
Single N-Channel 200 V 0.085 Ohms Flange Mount Power Mosfet - TO-247AC
Dettagli
VishayIRFP254PBF
Single N-Channel 250 V 0.14 Ohms Flange Mount Power Mosfet - TO-247AC
Dettagli

Descrizioni

Descrizioni di Infineon IRFP260MPBF fornite dai suoi distributori.

Trans MOSFET N-CH Si 200V 50A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 50A TO-247AC
Win Source
Single N-Channel 200 V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247-3AC
Future Electronics
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole
Avnet
IR MOSFET Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
ComSIT Distribution GmbH
MOSFET Operating temperature: -55...175 °C Housing type: TO-247-3 Polarity: N Variants: Enhancement mode Power dissipation: 300 W
Distrelec
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:300W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFP260MPBF.
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon

Immagini

Infineon
Augswan
Newark
TME
RS (Formerly Allied Electronics)
LZChips
Rochester Electronics
Micros
International Rectifier
LCSC
UTSource

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFP260M
  • IRFP260MPBF.
  • SP001572874