Vishay IRFP250PBF
$ 1.63
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Cronologia dell'inventario
Tendenza a 3 mesi: +11.11%
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Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonIRFP250MPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
InfineonIRFP250NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V
InfineonIRFP3415PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-247AC;PD 200W;VGS +/-20V
Descrizioni
Descrizioni di Vishay IRFP250PBF fornite dai suoi distributori.
Single N-Channel 200 V 0.085 Ohms Flange Mount Power Mosfet - TO-247AC
Power MOSFET, N Channel, 200 V, 30 A, 0.085 ohm, TO-247AC, Through Hole
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N Channel Mosfet, 200V, 30A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFP250PBF.
MOSFET, N, 200V, 30A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:30A; Resistance, Rds On:0.085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:120A; Lead Spacing:5.45mm; Power Dissipation:180W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds Max:200V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: +11.11%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time62 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation190 W
Rds On Max85 mΩ
Resistance85 mΩ
Rise Time86 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time70 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)200 V
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità