Descrizioni di Infineon IRFL4105TRPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 3.7A;SOT-223;PD 1W;VGS +/-20V
Power MOSFET, N Channel, 55 V, 5.2 A, 0.045 ohm, SOT-223, Surface Mount
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
MOSFET, 55V, 3.7A, 45 MOHM, 23 NC QG, SOT-223
Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R
Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, N-CH, 55V, 5.2A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5.2 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 45 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 7.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1