Infineon IRFL024NPBF
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-31
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Parti correlate
InfineonIRFL024NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
InfineonIRLL024NPBF
Transistor: N-MOSFET; unipolar; 55V; 4.4A; 0.065ohm; 2.1W; -55+150 deg.C; SMD; SOT223
InfineonIRLL024NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 4.4A;SOT-223;PD 2.1W;VGS +/-16V
VishayIRFL014TRPBF
IRFL014TRPBF N-CHANNEL MOSFET TRANSISTOR, 2.7 A, 60 V, 3 + TAB-PIN SOT-223
Descrizioni
Descrizioni di Infineon IRFL024NPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:55V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:11.2A; SMD Marking:FL024N; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.8 A
Current Rating2.8 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time17.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance400 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance75 mΩ
Package Quantity1760
PackagingBulk
Power Dissipation2.1 W
Rds On Max75 mΩ
Recovery Time53 ns
Rise Time13.4 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time22.2 ns
Turn-On Delay Time8.1 ns
Voltage Rating (DC)55 V
Dimensions
Height1.4478 mm
Length6.6802 mm
Width3.7 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità