Infineon IRFL024ZPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46.2 Milliohms;ID 5.1A;SOT-223;PD 1W;VF 1.3V

Transistor MOSFET N Channel 55 Volt 5.1 Amp 4 Pin 3+ Tab SOT-223

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Trans MOSFET N-CH 55V 5.1A 4-Pin(3+Tab) SOT-223

MOSFET N-CH 55V 5.1A SOT223 / Advanced Process Technology

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.0575ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:5.1A; On Resistance, Rds(on):57.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

MOSFET, N, 55V, 5.1A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:55V; On Resistance Rds(on):58mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.8W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:45°C/W; On State resistance @ Vgs = 10V:57.5ohm; Package / Case:SOT-223; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:41A; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V