Infineon IRFL024ZPBF
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Parti correlate
InfineonIRFL4105TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 3.7A;SOT-223;PD 1W;VGS +/-20V
InfineonIRFL4105PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 3.7A;SOT-223;PD 1W;VGS +/-20V
Descrizioni
Descrizioni di Infineon IRFL024ZPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46.2 Milliohms;ID 5.1A;SOT-223;PD 1W;VF 1.3V
Transistor MOSFET N Channel 55 Volt 5.1 Amp 4 Pin 3+ Tab SOT-223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 5.1A 4-Pin(3+Tab) SOT-223
MOSFET N-CH 55V 5.1A SOT223 / Advanced Process Technology
Small Signal Field-Effect Transistor, 5.1A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:5.1A; On Resistance, Rds(on):57.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
MOSFET, N, 55V, 5.1A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:55V; On Resistance Rds(on):58mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.8W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:45°C/W; On State resistance @ Vgs = 10V:57.5ohm; Package / Case:SOT-223; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:41A; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.1 A
Current Rating5.1 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance57.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance57.5 mΩ
Package Quantity1760
PackagingBulk
Power Dissipation1 W
Rds On Max57.5 mΩ
Resistance57.5 MΩ
Rise Time21 ns
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time7.8 ns
Voltage Rating (DC)55 V
Dimensions
Height1.8 mm
Length6.6802 mm
Width3.7 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità