Infineon IRFI4321PBF

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package, TO-220-3 FP, RoHS
$ 1.451
Production
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
AvnetIRFI4321PBF17701
1d
NewarkIRFI4321PBF19561
Arrow Electronics
2
IRFI4321PBF17.6701
Future Electronics
2
IRFI4321PBF200050Tube
DigiKey448-IRFI4321PBF-ND33401Tube

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFI4321PBF.

Newark

Datasheet9 pagine9 anni fa

IHS

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRFI4321PBF
InfineonIRFI4228PBF
Price @ 1000
$ 1.451
$ 1.05
Stock
406,336
75,259
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220-3
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
34 A
34 A
Threshold Voltage
5 V
-
Rds On Max
16 mΩ
16 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
46 W
46 W
Input Capacitance
4.44 nF
4.56 nF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-23
Lifecycle StatusProduction (Last Updated: 3 months ago)

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onsemiFDPF190N15A
Single N-Channel 150 V 33 W 39 nC Silicon Through Hole Mosfet - TO-220F
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onsemiFQPF45N15V2
Power MOSFET, N-Channel, QFET®, 150 V, 45 A, 40 mΩ, TO-220F
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Descrizioni

Descrizioni di Infineon IRFI4321PBF fornite dai suoi distributori.

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package, TO-220-3 FP, RoHS
Infineon SCT
Single N-Channel 150V 16 mOhm 73 nC HEXFET® Power Mosfet - TO-220-3
Future Electronics
IRFI4321PBF N-Channel MOSFET, 34 A, 150 V HEXFET, 3-Pin TO-220FP Infineon
Jak Electronics
Trans MOSFET N-CH 150V 34A 3-Pin(3+Tab) TO-220AB Full-Pak
Avnet
MOSFET, N-CH, 150V, 34A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
Farnell
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 34 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 12.2 / Gate-Source Voltage V = 30 / Fall Time ns = 20 / Rise Time ns = 29 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 46
Distrelec

Immagini

Infineon
Augswan
Farnell
Farnell
TME
Newark
Micros
RS (Formerly Allied Electronics)
LZChips

Alias del produttore

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFI4321
  • SP001556676