Infineon IRFH5304TR2PBF
$ 1.06
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFH5304TR2PBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-08
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Parti correlate
InfineonIRFHM830DTRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
InfineonIRFHM830TR2PBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package
InfineonIRFHM830TRPBF
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Descrizioni
Descrizioni di Infineon IRFH5304TR2PBF fornite dai suoi distributori.
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Trans MOSFET N-CH 30V 22A 8-Pin PQFN T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 22A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 30V, 79A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:79A; Power Dissipation Pd:46W; Voltage Vgs Max:20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.65 nF
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.35 V
Number of Elements1
Power Dissipation46 W
Rds On Max4 mΩ
Recovery Time29 ns
Rise Time25 ns
Threshold Voltage2.35 V
Turn-Off Delay Time12 ns
Turn-On Delay Time13 ns
Dimensions
Height810 µm
Length5 mm
Width5.0038 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFH5304TR2PBF.
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità